View QM30CY-H_1047510.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30CY-H
* * * * *
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION UPS, CVCF
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20 10.5 13 10.5 80 20 27
B2 E2
(7) 6.5 C2 E1E2
B2 E2
C1
34
C2
E1E2
C1 12
E1 B1
E1 B1 Tab#110, t=0.5 6.5
M5
31
LABEL (8)
22.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1.8 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A -IC=30A (diode forward voltage) IC=30A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.85 -- 1.5 12 3.0 0.5 2.0 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
VCE=5.0V
80 IB=2.0A 60 IB=1.0A IB=0.5A 40 IB=0.3A 20 IB=0.1A
DC CURRENT GAIN hFE
VCE=2.0V
0
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0
VCE=2.0V Tj=25C
VBE(sat)
SATURATION VOLTAGE
VCE(sat) IB=0.4A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
1.4
1.8
2.2
2.6
3.0
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 Tj=25C Tj=125C 4 10 1 7 5 4 3 2 10 0 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
ts
3
SWITCHING TIME
2
IC=30A
ton tf
1
IC=10A IC=20A
Tj=25C Tj=125C 2 3 4 5 7 10 1
VCC=300V IB1=-IB2=0.6A 2 3 4 5 7 10 2
0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
10 -1 10 0
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) 10 1 7 5 4 3 2 VCC=300V IB1=0.6A IC=30A Tj=25C Tj=125C
REVERSE BIAS SAFE OPERATING AREA 70 COLLECTOR CURRENT IC (A) 60 50 Tj=125C 40 30 20 10 0 0 100 200 300 400 500 600 700 VCE (V) IB2=-1A -3A -5A
ts
SWITCHING TIME
tf 10 0 7 5 4 3 10 -1 2 3 4 5 7 10 0
2 3 4 5 7 10 1
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 TC=25C 2 NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 100
DERATING FACTOR OF F. B. S. O. A.
10
COLLECTOR CURRENT IC (A)
0
s
DERATING FACTOR (%)
90 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
DC
SECOND BREAKDOWN AREA
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0.5 0.4 Zth (j-c) (C/ W)
50 0 s
1m
s
80 100 120 140 160 TC (C)
CASE TEMPERATURE
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.3
0.2
0.1 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s)
Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4
0.4
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A)
500
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
10 2 7 5 3 2 10 2 VCC=300V IB1=-IB2=0.6A Tj=25C Tj=125C
400
Irr
200
100
0
10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 10 0 7 5 Qrr 3 trr 2 10 -1 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 2.0
1.6
Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
TIME (s)
Feb.1999
trr (s)
300
Irr (A), Qrr (c)
10 1 7 5 3 2
10 1

▲Up To Search▲

Price & Availability of QM30CY-H

	To Download QM30CY-H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .